Synaptic plasticity of MoS2 thin-film memristor fabricated by one single-step plasma-enhanced chemical vapor deposition

Mingrui Liu; Jianbiao Chen; Xuhui Tian; Shuangju Jia; Yanxia Liang; Lizhi Zhang; Ye Tao; Jiangtao Chen; Jian Wang; Yun Zhao; Xuqiang Zhang; Yan Li

doi:10.1016/j.mtcomm.2025.111642

JOURNAL ARTICLE

Synaptic plasticity of MoS2 thin-film memristor fabricated by one single-step plasma-enhanced chemical vapor deposition

Mingrui Liu Jianbiao Chen Xuhui Tian Shuangju Jia Yanxia Liang Lizhi Zhang Ye Tao Jiangtao Chen Jian Wang Yun Zhao Xuqiang Zhang Yan Li

Year: 2025 Journal: Materials Today Communications Vol: 43 Pages: 111642-111642 Publisher: Elsevier BV

DOI: 10.1016/j.mtcomm.2025.111642

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Keywords:

Materials science Chemical vapor deposition Memristor Thin film Plasma-enhanced chemical vapor deposition Plasma Nanotechnology Deposition (geology) Chemical engineering Combustion chemical vapor deposition Optoelectronics Synaptic plasticity Carbon film Electronic engineering

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Advanced Memory and Neural Computing

Physical Sciences → Engineering → Electrical and Electronic Engineering

Perovskite Materials and Applications

Physical Sciences → Engineering → Electrical and Electronic Engineering

MXene and MAX Phase Materials

Physical Sciences → Materials Science → Materials Chemistry

Synaptic plasticity of MoS2 thin-film memristor fabricated by one single-step plasma-enhanced chemical vapor deposition

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