(Invited) Advances in Oxide Thin-Film Transistor Based Inverter Technology

Abstract

Several advantages in oxide device processing, including low-temperature processability and exceptional uniformity on a large scale, render oxide device technology essential for a wide range of next-generation electronics. Advancing oxide thin-film transistor-based circuits marks a crucial milestone in developing the next generation of cost-effective ubiquitous electronics. This moves forward oxide-TFT to the forefront of transistor technology, marking the commencement of a new era characterized by low-cost mass-production and high-performance. Extensive efforts have been devoted to developing oxide inverters, including NMOS, and CMOS inverters, and excellent characteristics, such as high-speed separation, low-power dissipation, and sufficient noise marge, have been already demonstrated. Nevertheless, persistent open issues, such as the absence of high-performance p-channel oxide-TFT and the lack of doping control, in oxide semiconductors impede the progress of oxide inverter technology development to the next levels. This presentation reviews recent advances in oxide-TFT inverter technology and delves into open issues that should be addressed for oxide-TFT-based circuit applications. First, I will present the advancements in oxide-TFT inverter technology, encompassing NMOS, PMOS, and CMOS, primarily drawing from our research activities. Subsequently, we will elucidate and discuss strategies for addressing open issues for the development of high-performance oxide-TFT-based circuit applications.