JOURNAL ARTICLE

Plasma etching of silicon carbide trenches with high aspect ratio and rounded corners

Xiaoyu TanGuoming LinAnkuan JiYuanwei Lin

Year: 2024 Journal:   Materials Science in Semiconductor Processing Vol: 188 Pages: 109172-109172   Publisher: Elsevier BV
Keywords:
Materials science Silicon carbide Etching (microfabrication) Aspect ratio (aeronautics) Plasma etching Carbide Silicon Composite material Metallurgy

Metrics

6
Cited By
2.22
FWCI (Field Weighted Citation Impact)
30
Refs
0.83
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Silicon Carbide Semiconductor Technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Diamond and Carbon-based Materials Research
Physical Sciences →  Materials Science →  Materials Chemistry
Copper Interconnects and Reliability
Physical Sciences →  Materials Science →  Electronic, Optical and Magnetic Materials

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