Thickness-dependent quasi-two-dimensional β-Ga2O3 solar-blind photodetectors prepared via GaSe oxidation
Jianwen HuKexin HeHaoran LongYin HuPenghong CiYue‐Yang LiuJing ZhangLiyuan LiuJuehan YangZhongming Wei
Abstract
β-Ga 2 O 3 nanosheets are prepared by GaSe oxidation, and the thickness dependence of their photodetectors are investigated. The operational stability of the devices improved by decreasing thickness.
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