High-Sensitivity Amorphous Boron Nitride Vacuum Ultraviolet Photodetectors

Xiaohang Liu; Tianyu Wu; Ji-Hong Zhao; Junjie Zhu; Xi Chen; Yu Han; Yanjun Gao; Ji Zhou; Zhanguo Chen

doi:10.1109/led.2024.3505235

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High-Sensitivity Amorphous Boron Nitride Vacuum Ultraviolet Photodetectors

Xiaohang Liu Tianyu Wu Ji-Hong Zhao Junjie Zhu Xi Chen Yu Han Yanjun Gao Ji Zhou Zhanguo Chen

Year: 2024 Journal: IEEE Electron Device Letters Vol: 46 (1)Pages: 76-79 Publisher: Institute of Electrical and Electronics Engineers

DOI: 10.1109/led.2024.3505235

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Keywords:

Photodetector Boron nitride Optoelectronics Materials science Vacuum ultraviolet Amorphous solid Ultraviolet Nitride Boron Sensitivity (control systems) Optics Nanotechnology Chemistry Electronic engineering Physics Engineering

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Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Photocathodes and Microchannel Plates

Physical Sciences → Engineering → Biomedical Engineering

High-Sensitivity Amorphous Boron Nitride Vacuum Ultraviolet Photodetectors

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