Abstract

Abstract Platinum diselenide (PtSe 2 ), a 2D noble metal dichalcogenide, has recently received significant attention due to its outstanding properties. It undergoes a semimetal to semiconductor transition when thinned, offers a bandgap in the infrared range, and exhibits excellent stability in ambient conditions. These properties make it a prime active material in optoelectronic and chemical sensing devices. However, there is a high demand for a synthesis method that can produce large‐scale and reliable high‐quality PtSe 2 . In this study, the growth of PtSe 2 is presented by metal–organic vapor deposition on a variety of substrates. Comprehensive Raman, X‐ray photoelectron, and X‐ray diffraction spectroscopy, as well as scanning tunneling microscopy characterization reveals the high quality of the deposited PtSe 2 . Domains within the films are found to be up to several hundreds of nanometers in size, and their highly ordered crystalline structure is evident from atomic‐scale measurements. Electrical characterization demonstrates improved conductivity relative to conventional synthesis methods. This study provides fundamental guidance for the scalable synthesis and implementation of high quality PtSe 2 layers with controllable thickness, offering a key requirement for the implementation of PtSe 2 in future applications.

Keywords:
Materials science Chemical vapor deposition Scalability Metal Nanotechnology Environmental chemistry Chemical engineering Metallurgy Computer science Chemistry Engineering

Metrics

6
Cited By
1.02
FWCI (Field Weighted Citation Impact)
48
Refs
0.75
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

2D Materials and Applications
Physical Sciences →  Materials Science →  Materials Chemistry
Chalcogenide Semiconductor Thin Films
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Molecular Junctions and Nanostructures
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
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