Sulfur-doped g-C3N4/V2C MXene Schottky junctions for superior photocatalytic H2 evolution

Haitao Wang; Jipeng Fan; Jing Zou; Yujie Zheng; Dingsheng Wang; Jizhou Jiang

doi:10.1039/d4ta05929h

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Sulfur-doped g-C₃N₄/V₂C MXene Schottky junctions for superior photocatalytic H₂ evolution

Haitao Wang Jipeng Fan Jing Zou Yujie Zheng Dingsheng Wang Jizhou Jiang

Year: 2024 Journal: Journal of Materials Chemistry A Vol: 12 (44)Pages: 30429-30441 Publisher: Royal Society of Chemistry

DOI: 10.1039/d4ta05929h

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Abstract

An advanced sulfur-doped g-C 3 N 4 /V 2 C MXene (SCN/V 2 C) Schottky junction HER photocatalyst was prepared via vacuum ball milling and subsequent annealing.

Keywords:

Photocatalysis Doping Materials science Schottky barrier Optoelectronics Chemistry Nanotechnology Catalysis Biochemistry

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Advanced Photocatalysis Techniques

Physical Sciences → Energy → Renewable Energy, Sustainability and the Environment

MXene and MAX Phase Materials

Physical Sciences → Materials Science → Materials Chemistry

Advanced Nanomaterials in Catalysis

Physical Sciences → Materials Science → Materials Chemistry

Sulfur-doped g-C₃N₄/V₂C MXene Schottky junctions for superior photocatalytic H₂ evolution

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