Theoretical investigation of Rayleigh-type surface acoustic waves with high electromechanical coupling coefficient in c-axis-tilted ScAlN film/3C-SiC substrate structure

Abstract

Surface acoustic wave (SAW) resonators are essential components of mobile communication technology. Advanced performance SAW resonators are needed to support beyond fifth-generation mobile communication technology, which aims to achieve unprecedentedly high data rates and low latency using wide frequency bands in the RF spectrum. This study theoretically investigates the propagation characteristics of a non-leaky Rayleigh-type SAW (RSAW) propagating in a c-axis-tilted ScAlN film/3C-SiC substrate structure. By appropriately selecting the c-axis tilt angle and the film thickness of the ScAlN film, a high electromechanical coupling coefficient (K2) value was obtained in the second-mode RSAW (Sezawa wave). The maximum K2 value for the Sezawa wave was 8.03%, with a phase velocity of 7456 m/s and a power flow angle of 0° under the structural conditions where the K2 value was maximized. These properties offer significant advantages for achieving wide frequency bands, high operating frequencies, and ease of design for SAW resonators. The structural conditions under which good propagation characteristics were obtained in the Sezawa waves were found to coincide with the conditions that maximize the electromechanical coupling coefficient of the quasi-longitudinal wave in the ScAlN film, and a significant increase in the shear vertical component of Sezawa wave particle displacement was observed. Additionally, ScAlN films with a 40% Sc concentration can be fabricated using sputtering and molecular beam epitaxy. Recent advancements have reported the production of high-quality 3C-SiC wafers and large 3C-SiC film/silicon wafers. Therefore, the c-axis-tilted ScAlN film/3C-SiC substrate structure shows great potential as a candidate for next-generation SAW resonators.