On the Extreme Scaling of Transistors with Monolayer MOS2 Channel

Wen-Chia Wu; Terry Y.T. Hung; D. Mahaveer Sathaiya; Edward Chen; Chen-Feng Hsu; Walker Yun; Hsiang-Chi Hu; Bo-Heng Liu; T.Y. Lee; Chi‐Chung Kei; Wen‐Hao Chang; Jin Cai; Wallace Jeff; Chung-Cheng Wu; H.‐S. Philip Wong; Chao-Hsin Chien; Chao-Ching Cheng; Iuliana Radu

doi:10.1109/vlsitechnologyandcir46783.2024.10631401

JOURNAL ARTICLE

On the Extreme Scaling of Transistors with Monolayer MOS2 Channel

Wen-Chia Wu Terry Y.T. Hung D. Mahaveer Sathaiya Edward Chen Chen-Feng Hsu Walker Yun Hsiang-Chi Hu Bo-Heng Liu T.Y. Lee Chi‐Chung Kei Wen‐Hao Chang Jin Cai Wallace Jeff Chung-Cheng Wu H.‐S. Philip Wong Chao-Hsin Chien Chao-Ching Cheng Iuliana Radu

Year: 2024 Pages: 1-2

DOI: 10.1109/vlsitechnologyandcir46783.2024.10631401

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Keywords:

Monolayer Scaling Transistor Channel (broadcasting) Computer science Optoelectronics Materials science Electrical engineering Nanotechnology Computer network Engineering Voltage Mathematics

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Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

On the Extreme Scaling of Transistors with Monolayer MOS2 Channel

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