A flexible memory device made of SnO2-hBN nanocomposite exhibits stable resistive switching application

Km. Komal; Mukhtiyar Singh; Bharti Singh

doi:10.1007/s10853-024-09976-9

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A flexible memory device made of SnO2-hBN nanocomposite exhibits stable resistive switching application

Km. Komal Mukhtiyar Singh Bharti Singh

Year: 2024 Journal: Journal of Materials Science Vol: 59 (29)Pages: 13508-13531 Publisher: Springer Science+Business Media

DOI: 10.1007/s10853-024-09976-9

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Keywords:

Materials science Nanocomposite Solid mechanics Resistive random-access memory Resistive touchscreen Optoelectronics Nanotechnology Composite material Engineering physics Electrical engineering Voltage

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Advanced Memory and Neural Computing

Physical Sciences → Engineering → Electrical and Electronic Engineering

Transition Metal Oxide Nanomaterials

Physical Sciences → Materials Science → Polymers and Plastics

Ferroelectric and Piezoelectric Materials

Physical Sciences → Materials Science → Materials Chemistry

A flexible memory device made of SnO2-hBN nanocomposite exhibits stable resistive switching application

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