APTES functionalized AlGaN/GaN HEMT for carbon dioxide sensing at room temperature

Linxin Xu; Heqiu Zhang; Yihang Wu; Xiaochuan Xia; Haiyan Gu; Jiang Zhu; Huishi Huang; Wenping Guo; Hongwei Liang

doi:10.1007/s10854-024-13149-4

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APTES functionalized AlGaN/GaN HEMT for carbon dioxide sensing at room temperature

Linxin Xu Heqiu Zhang Yihang Wu Xiaochuan Xia Haiyan Gu Jiang Zhu Huishi Huang Wenping Guo Hongwei Liang

Year: 2024 Journal: Journal of Materials Science Materials in Electronics Vol: 35 (19) Publisher: Springer Science+Business Media

DOI: 10.1007/s10854-024-13149-4

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Keywords:

High-electron-mobility transistor Materials science Carbon dioxide Optoelectronics Wide-bandgap semiconductor Chemical engineering Chemistry Electrical engineering Transistor

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Gas Sensing Nanomaterials and Sensors

Physical Sciences → Engineering → Electrical and Electronic Engineering

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Spectroscopy and Laser Applications

Physical Sciences → Chemistry → Spectroscopy

APTES functionalized AlGaN/GaN HEMT for carbon dioxide sensing at room temperature

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