JOURNAL ARTICLE

APTES functionalized AlGaN/GaN HEMT for carbon dioxide sensing at room temperature

Linxin XuHeqiu ZhangYihang WuXiaochuan XiaHaiyan GuJiang ZhuHuishi HuangWenping GuoHongwei Liang

Year: 2024 Journal:   Journal of Materials Science Materials in Electronics Vol: 35 (19)   Publisher: Springer Science+Business Media
Keywords:
High-electron-mobility transistor Materials science Carbon dioxide Optoelectronics Wide-bandgap semiconductor Chemical engineering Chemistry Electrical engineering Transistor

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0.37
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38
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0.53
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Citation History

Topics

Gas Sensing Nanomaterials and Sensors
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
GaN-based semiconductor devices and materials
Physical Sciences →  Physics and Astronomy →  Condensed Matter Physics
Spectroscopy and Laser Applications
Physical Sciences →  Chemistry →  Spectroscopy
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