Fluid models calculation of Ar/CF₄ radiofrequency capacitively coupled plasmas

Abstract

Abstract A fluid model is used to calculate plasma density in radiofrequency capacitively coupled plasmas (RF-CCPs), assuming geometrically symmetric Ar/CF 4 . Electrodes are powered by a 200 V sinusoidal wavefront at 13.56 MHz. The gap between the electrodes is 5 cm. The plasma species density is calculated as a function of the gas pressure, electron temperature, and gas composition. As expected from recent experiments, CF 3 + and F are dominant for all simulation parameters (Plasma Chemistry and Plasma Processing, 2022; 42: 989-1002, 2013 Pulsed Power Conference (PPC), 19th IEEE, DOI:10.1109/PPC.2013.6627595). The results explain the pathways to perform atomic layer etching and nanolayer deposition processes. In order to reveal the effect of electron heating on the discharge dynamics, the spatiotemporal electron energy equation is coupled with the fluid model. Tailoring the driven potential has been found to control the concentration of some plasma species. When the plasma is driven by the fundamental frequency, ohmic and stochastic heating allow electrons to be heated symmetrically. Higher harmonics give rise to an electrical asymmetry and an electron heating asymmetry between the powered and grounded sheaths. The electron temperature depends on the driven harmonics; it adjusts gain and loss rates and some plasma species densities.