Electric-field tunable Type-I to Type-II band alignment transition in MoSe2/WS2 heterobilayers

Jed Kistner-Morris; Ao Shi; Erfu Liu; Trevor Arp; Farima Farahmand; Takashi Taniguchi; Kenji Watanabe; Vivek Aji; Chun Hung Lui; Nathaniel M. Gabor

doi:10.1038/s41467-024-48321-1

JOURNAL ARTICLE

Electric-field tunable Type-I to Type-II band alignment transition in MoSe2/WS2 heterobilayers

Jed Kistner-Morris Ao Shi Erfu Liu Trevor Arp Farima Farahmand Takashi Taniguchi Kenji Watanabe Vivek Aji Chun Hung Lui Nathaniel M. Gabor

Year: 2024 Journal: Nature Communications Vol: 15 (1)Pages: 4075-4075 Publisher: Nature Portfolio

DOI: 10.1038/s41467-024-48321-1

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Keywords:

Exciton Heterojunction Photocurrent Materials science Semiconductor Optoelectronics Electric field van der Waals force Band gap Luminescence Condensed matter physics Physics

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2D Materials and Applications

Physical Sciences → Materials Science → Materials Chemistry

Perovskite Materials and Applications

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advanced Photocatalysis Techniques

Physical Sciences → Energy → Renewable Energy, Sustainability and the Environment

Electric-field tunable Type-I to Type-II band alignment transition in MoSe2/WS2 heterobilayers

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