Floating body effect in indium–gallium–zinc–oxide (IGZO) thin-film transistor (TFT)

Jingyu Park; Seungwon Go; Woojun Chae; Chang Il Ryoo; Changwook Kim; Hyungju Noh; Seonggeun Kim; Byung Du Ahn; In-Tak Cho; Pil Sang Yun; Jong Uk Bae; Yoo Seok Park; Sangwan Kim; Dae Hwan Kim

doi:10.1038/s41598-024-60288-z

JOURNAL ARTICLE

Floating body effect in indium–gallium–zinc–oxide (IGZO) thin-film transistor (TFT)

Jingyu Park Seungwon Go Woojun Chae Chang Il Ryoo Changwook Kim Hyungju Noh Seonggeun Kim Byung Du Ahn In-Tak Cho Pil Sang Yun Jong Uk Bae Yoo Seok Park Sangwan Kim Dae Hwan Kim

Year: 2024 Journal: Scientific Reports Vol: 14 (1)Pages: 10067-10067 Publisher: Nature Portfolio

DOI: 10.1038/s41598-024-60288-z

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Keywords:

Thin-film transistor Transistor Materials science Optoelectronics Enhanced Data Rates for GSM Evolution Threshold voltage Indium Voltage Electrical engineering Layer (electronics) Nanotechnology Computer science Telecommunications Engineering

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Floating body effect in indium–gallium–zinc–oxide (IGZO) thin-film transistor (TFT)

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