Research progress of digital night vision EBAPS low-light-level device

Abstract

As a typical representative of new hybrid photodetector, electron bombardment active pixel sensors (EBAPS) not only have the advantages of high sensitivity, fast response and wide spectrum of vacuum devices, but also have the advantages of high spatial resolution, low power consumption, low cost, mature technology and digital output of solid-state devices which have become the mainstream research direction of digital night vision devices at present. EBAPS devices based on third-generation cathode material gallium arsenide (GaAs) exhibit higher cathode sensitivity and quantum efficiency in the near-infrared band. They have addressed cathode fatigue issues through automatic gating high-voltage power supply technology, effectively improving cathode resolution and dynamic range. This paper introduces the research status of digital low light level (LLL) devices, focuses on the research progress of EBAPS devices based on GaAs cathode, and puts forward the prospect of digital low light level devices for night vision in the future.