JOURNAL ARTICLE
Photoresistance of a film heterostructure Ba<sub>0.8</sub>Sr<sub>0.2</sub>TiO<sub>3</sub>/LaMnO<sub>3</sub>/Ba<sub>0.8</sub>Sr<sub>0.2</sub>TiO<sub>3</sub>/MgO
A. O. ChibirevA. V. LeontyevT. M. SalikhovР. Ф. Мамин
Year: 2023 Journal: Известия Российской академии наук Серия физическая Vol: 87 (4)Pages: 534-537 Publisher: Pleiades Publishing
Abstract
An effect of illumination by ultrashort laser pulsed light at 514 nm on electrical resistance of Ba0.8Sr0.2TiO3/LaMnO3 heterostructure has been observed. In the temperature range below 175 K, illumination causes a reversible increase in the resistance. A time constant linked to the rate of resistance changes is about 30–50 s.
Keywords:
Heterojunction Materials science Analytical Chemistry (journal) Chemistry Optoelectronics Environmental chemistry
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Topics
Electronic and Structural Properties of Oxides
Physical Sciences → Materials Science → Materials Chemistry
Magnetic and transport properties of perovskites and related materials
Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials
Multiferroics and related materials
Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials
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