GALLIUM NANOPARTICLES OBTAINED ON SILICON SUBSTRATES BY THERMAL EVAPORATION METHOD

Abstract

Gallium nanostructures have been obtained on silicon substrates by thermal evaporation in an argon atmosphere. The sizes, density, and shape of Ga particles have been determined by computer processing of electron SEM-images. The condensation of Ga on Si substrates for 10, 15, and 20 s ensured the formation of particles of several types: spherical, triangular, square, and in the form of rods and polyhedrons. The increase in the Ga condensation time to 20 s led to the increase in the density of spherical nanoparticles by 41%.