Interface states modulation in Pt/Graphene/GaN Schottky barrier diodes

Junxue Ran; Yijian Song; Xiaoli Ji; Renfeng Chen; Jiankun Yang; Junxi Wang; Tongbo Wei

doi:10.1016/j.mssp.2024.108410

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Interface states modulation in Pt/Graphene/GaN Schottky barrier diodes

Junxue Ran Yijian Song Xiaoli Ji Renfeng Chen Jiankun Yang Junxi Wang Tongbo Wei

Year: 2024 Journal: Materials Science in Semiconductor Processing Vol: 177 Pages: 108410-108410 Publisher: Elsevier BV

DOI: 10.1016/j.mssp.2024.108410

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Keywords:

Materials science Schottky barrier Graphene Interface (matter) Modulation (music) Optoelectronics Diode Schottky diode Nanotechnology Composite material Wetting

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Interface states modulation in Pt/Graphene/GaN Schottky barrier diodes

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