Influence of shear strain on the electronic properties of monolayers MoS2, WS2, and MoS2/WS2 vdW heterostructure

Yimin Sun

doi:10.1007/s00894-024-05913-4

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Influence of shear strain on the electronic properties of monolayers MoS2, WS2, and MoS2/WS2 vdW heterostructure

Yimin Sun

Year: 2024 Journal: Journal of Molecular Modeling Vol: 30 (4)Pages: 112-112 Publisher: Springer Science+Business Media

DOI: 10.1007/s00894-024-05913-4

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Keywords:

Materials science Monolayer Band gap Density functional theory Heterojunction CASTEP Direct and indirect band gaps Electronic band structure Optoelectronics Condensed matter physics Nanotechnology Computational chemistry Chemistry Physics

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2D Materials and Applications

Physical Sciences → Materials Science → Materials Chemistry

MXene and MAX Phase Materials

Physical Sciences → Materials Science → Materials Chemistry

Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

Influence of shear strain on the electronic properties of monolayers MoS2, WS2, and MoS2/WS2 vdW heterostructure

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