Antimony-Doped Tin Oxide Hole Injection Interlayer Improving the Efficiency of Perovskite Nanocrystal Light Emitting Diodes

Abstract

We present significant performance enhancement of CsPbBr3 perovskite nanocrystal (NC) light emitting diodes (PNC LEDs) by incorporation of a solution processed doped metal oxide hole injection interlayer consisting of 10 atom % doped antimony tin oxide (ATO) within the PNC LEDs device architecture. The incorporation of an ATO interlayer between ITO and poly-TPD improves the bottom electrode hole injection properties and provides charge balanced PNC LEDs that show three and half times increased luminance, lower turn-on voltage, and improved maximum current and power efficiency compared to reference CsPbBr3 PNC LEDs incorporating the commonly used PEDOT:PSS hole injection interlayer.