In-MOF derived In2S3-X@ZnS heterojunction with rich sulfur vacancies for enhanced performance in photocatalytic nitrogen fixation

Dongfeng Sun; Nandong Li; Kai Wang; Yuan Yu; Zhi‐Ru Li; Yanning Qu; Bingshe Xu

doi:10.1016/j.apsusc.2024.159658

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In-MOF derived In2S3-X@ZnS heterojunction with rich sulfur vacancies for enhanced performance in photocatalytic nitrogen fixation

Dongfeng Sun Nandong Li Kai Wang Yuan Yu Zhi‐Ru Li Yanning Qu Bingshe Xu

Year: 2024 Journal: Applied Surface Science Vol: 656 Pages: 159658-159658 Publisher: Elsevier BV

DOI: 10.1016/j.apsusc.2024.159658

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Keywords:

Heterojunction Photocurrent Photocatalysis Sulfur Materials science Vacancy defect Chemical engineering Chemisorption Nitrogen Band gap Nanotechnology Photochemistry Catalysis Optoelectronics Chemistry Crystallography Metallurgy Organic chemistry

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Advanced Photocatalysis Techniques

Physical Sciences → Energy → Renewable Energy, Sustainability and the Environment

Ammonia Synthesis and Nitrogen Reduction

Physical Sciences → Chemical Engineering → Catalysis

MXene and MAX Phase Materials

Physical Sciences → Materials Science → Materials Chemistry

In-MOF derived In2S3-X@ZnS heterojunction with rich sulfur vacancies for enhanced performance in photocatalytic nitrogen fixation

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