Ultra Low Power-Low Noise GNRFET Wideband Amplifier for Cryogenic Applications

Abstract

Cryogenics amplifiers feature very low noise injection and low power consumption, and therefore, they are of highly demand in RF imaging, space communications, medical applications, and quantum computing. Unconditional stability with high gain also feature these applications. The band gaps of these devices are independent from temperature, suggesting their suitability for cryogenics applications. Furthermore, the nanometer scale lengths of these devices lead to ballistic transport with no scattering or diffusion, resulting in high-speed, low-power, and low noise capabilities within Extremely High Frequency (EHF) operating range that may extend into the THz. This study addresses these parameter issues within the range of 90K to 300K, assuming liquid nitrogen coolant medium, and further shows its stability above the room temperature as well. An appropriate model for the device that incorporates complex parasitics was investigated within this temperature range. The device with its estimated parameters, has been integrated into a simulated three-stage amplifier system. A low-noise gain between 16.9-18.9 dB with estimated noise figure of 2.97 dB and a bandwidth of 269 GHz bandwidth were predicted, with a high Stern stability factor suggesting unconditional stability over the bandwidth.