Liquid Phase Deposition of Hafnium Oxide Thin Films

Abstract

Hafnium oxide (HfO2) thin films were successfully prepared by the liquid phase deposition (LPD) method. The surface appearance, composition, optical characteristics, and electrical properties of HfO2 thin films generated by LPD were studied, as well as the reaction mechanism. The results reveal that the chemical composition of HfO2 thin films generated by LPD is pure and the structure is dense and continuous. The physical and chemical properties are stable, and the film thickness is around 40 nm after sufficient growth. The transmittance of HfO2 films after annealing at 500 °C is greater than 93%, the leakage current density at 1 V is 1.38× 10-6 A/cm2, and the breakdown voltage is 6.4 V. At the same time, based on the capacitance value at 1 MHz, the dielectric constant of the HfO2 film is estimated to be around 20.4.