Nonepitaxial Wafer‐Scale Single‐Crystal 2D Materials on Insulators

Abstract

Abstract Next‐generation nanodevices require 2D material synthesis on insulating substrates. However, growing high‐quality 2D‐layered materials, such as hexagonal boron nitride (hBN) and graphene, on insulators is challenging owing to the lack of suitable metal catalysts, imperfect lattice matching with substrates, and other factors. Therefore, developing a generally applicable approach for realizing high‐quality 2D layers on insulators remains crucial, despite numerous strategies being explored. Herein, a universal strategy is introduced for the nonepitaxial synthesis of wafer‐scale single‐crystal 2D materials on arbitrary insulating substrates. The metal foil in a nonadhered metal–insulator substrate system is almost melted by a brief high‐temperature treatment, thereby pressing the as‐grown 2D layers to well attach onto the insulators. High‐quality, large‐area, single‐crystal, monolayer hBN and graphene films are synthesized on various insulating substrates. This strategy provides new pathways for synthesizing various 2D materials on arbitrary insulators and offers a universal epitaxial platform for future single‐crystal film production.