Numerical Simulation of Highly Sensitive Ga₂O₃ Pressure Sensor

Abstract

This article presents beta‐gallium oxide (β‐Ga 2 O 3 ) micro electro mechanical systems (MEMS) strain/pressure sensors as a way to enhance sensitivity. The model consists of four piezoresistive strain gauges connected in a Wheatstone bridge configuration. The MEMS model is simulated from 0 Pa to 50 kPa, resulting in an output signal range of −3–16 mV and a responsivity of 0.38 mV kPa −1 . The simulation also shows that as temperature increases, the resistance of the piezoresistive material in the MEMS decreases, leading to changes in the output signals. The reliable device effectively utilizes the full Wheatstone bridge configuration to compensate for temperature‐related influences. These early results suggest that Ga 2 O 3 ‐based MEMS devices have great potential for use in high‐temperature pressure sensor applications in the future.