Performance Analysis of SnO₂/CsSnGeI₃/CuSCN perovskite solar cells using SCAPS 1D Simulator

Abstract

Abstract In this paper, we have used Cesium tin-germanium triiodide (CsSnGeI 3 ) perovskite-based solar cells (PSC). Here, SnO 2 and CuSCN have been used as electron transport and hole transport layers, respectively. We have optimized the performance parameters of this device using an open-source software known as Solar cell capacitance simulator (SCAPS–1D). We have varied the thickness of absorber layer to understand its impact on the efficiency of the proposed solar cell. We have also varied the interface defects and defect density of absorber layer to optimize the performance of this device. Further, we have also varied the thickness of ETL and HTL with respect to absorber layer to determine the best suitable thickness of all the layers. Later, we have varied the electron affinity of ETL layer to determine the most suitable value. Finally, we have varied the work function of the back metal contact to understand its influence on the efficiency of the solar cell. The analysis indicates that the highest obtained efficiency of this device is 31.97% and the observed open circuit voltage and fill factor is 1.25 V and 89.97%, respectively.