Zheng SuXiaobin GuoWen-hai QiuAng HeWen‐Hua LiYanping JiangShuifeng LiXin‐Gui Tang
Pure electric field-controlled 180° magnetization switching plays a vital role in low-power magnetoelectric memory devices. Using micromagnetic simulation, we engineered a square-shaped epitaxial Fe3Si nanomagnet on a PMN-PT piezoelectric substrate to make the magnetic easy axis slightly deviate 18° from the piezostrain axis, aiming to break the symmetry of the magnetization distribution and achieve deterministic magnetization reversal paths. Under the coaction of a magnetic field and an electric field, the simulated magnetic hysteresis loops and magnetic domain patterns reveal a fourfold to twofold magnetic anisotropy transition and magnetization reversal paths. Stimulated by pure electric field-induced piezoelectric strain, deterministic 180° magnetization reversals are accomplished by the two successive clockwise 90° switching process. The results help to comprehend electrically regulated deterministic magnetization reversal and pave an avenue for designing multistate spintronics devices.
Ren‐Ci PengJ. J. WangJia‐Mian HuLong‐Qing ChenCe‐Wen Nan
Yuan Jun YangBin HongMengmeng YangLiang Xin WangHao HeJiang Tao ZhaoKai HuHaoliang HuangXiaoguang LiZhen LuoChao KangMing LiHai Tao ZongChen Gao
Sheng‐Wei YangRen‐Ci PengTao JiangYukuai LiuLei FengJianjun WangLong‐Qing ChenXiaoguang LiCe‐Wen Nan
Gajanan PradhanFederica CelegatoAlessandro MagniMarco CoïssonGabriele BarreraPaola RizziP. Tiberto