Zichun WangHonggang PanBaozeng Zhou
A model of an atom-thick memory based on a CuInP 2 S 6 /MnCl 3 /CuInP 2 S 6 multiferroic heterostructure. Nonvolatile modulation of the electronic properties in DHM MnCl 3 can be achieved through magnetoelectric coupling with the FE CuInP 2 S 6 layer.
A. DziaugysJ. BanysJ. MacutkevičYulian M. Vysochanskii
Yue WangQiong WuK. Y. ShanMengwei HanWenyu JiangWeiting MengYanqing ZhangWeiming Xiong
V. MaisonneuveJ.M. RéauMing DongV.B. CajipeC. PayenJ. Ravez
Yue YangYing ZhaoYan SuJijun ZhaoXue Jiang
Mengwei SiPai-Ying LiaoGang QiuYuqin DuanPeide D. Ye