Hexagonal boron nitride based deep ultraviolet light emitter

Abstract

Hexagonal boron nitride (hBN) is a two-dimensional van der Waals material and is composed of boron and nitrogen atoms in a hexagonal lattice. hBN is the wide-bandgap semiconductor with a band of 6.4 eV and shows efficient band edge cathodoluminescence at 215 nm as well as lasing behavior. Here I will present the efficient DUV electroluminescence (EL) in band edge emission at 215 nm as well as broad 303-333 nm emission peaks from hBN van der Waals heterostructure. We observed that 303-333 nm broad emissions with phonon replica of optical phonon energy of hBN based on the Franck-Condon principle, which are attributed to the electric field induced color centers and its highly localized excitons features. These results demonstrate the promising developments of a highly efficient solid-state DUV light source at the nanoscale and allow the development of the key architectures for DUV nanophotonic, bio-sensing, high-precision metrology, and quantum information.