2D MXenes Based Flexible Photodetectors: Progress and Prospects

Abstract

Since the discovery of two-dimensional (2D) transition metal carbides/nitrides (MXenes) in 2011, they have attracted great attention in the fields of energy storage, catalysis, sensors, electromagnetic interference shielding and microwave absorption and so on owing to their special 2D layered structure, excellent electrical conductivity and electrochemical properties.In recent years, with the deep understanding of MXenes, the research related to the optoelectronic properties of MXenes has been widely concerned.Unlike other application fields, optoelectronic devices based on MXenes materials focus on their extension of the semiconductor properties, including tunable band gap of the MXenes via the design of the surface functional groups and layer control, etc., so as to achieve their transformation from metal to semiconductor properties.This paper will revolve around the photoelectric properties of MXenes materials, mainly introduce its application in flexible optoelectronic devices, and then systematically describe the current status and trend of MXenes materials in transparent electronic devices, photodetectors, image sensors, transistors as well as artificial neural vision network systems.The challenges and future development prospects of MXenes -based flexible optoelectronic devices will also be discussed.