Recent progress of InGaN-based red light emitting diodes

Zhicheng Lü; Kang Zhang; Jianbang Zhuang; Junjie Lin; Zhian Lu; Zhizhong Jiang; Yijun Lü; Zhong Chen; Weijie Guo

doi:10.1016/j.micrna.2023.207669

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Recent progress of InGaN-based red light emitting diodes

Zhicheng Lü Kang Zhang Jianbang Zhuang Junjie Lin Zhian Lu Zhizhong Jiang Yijun Lü Zhong Chen Weijie Guo

Year: 2023 Journal: Micro and Nanostructures Vol: 183 Pages: 207669-207669 Publisher: Elsevier BV

DOI: 10.1016/j.micrna.2023.207669

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Keywords:

Light-emitting diode Optoelectronics Materials science Indium Brightness Diode Reliability (semiconductor) Indium gallium nitride Gallium nitride Optics Nanotechnology Physics Power (physics)

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Recent progress of InGaN-based red light emitting diodes

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