MoTe₂/SnSe₂ Tunneling Diode Regulated by Giant Ferroelectric Field

Abstract

Tunneling devices hold significant potential for integrated circuit and microelectronic devices field, but conventional bulk semiconductors like silicon and gallium arsenide are reaching their limits in terms of scaling down and efficient gate regulation. However, the emergence of 2-D materials, which consist of atomically thin layers, offers highly tunable properties and promises to overcome these challenges. In this study, a broken-gap alignment heterojunction based on MoTe2 and SnSe2 was fabricated, which can be prepared into tunneling devices due to their band alignment type. To achieve efficient control of the gate voltage, we applied a ferroelectric polymer P(VDF-TrFE) as gate dielectric. The output characteristics of the MoTe2/SnSe2 heterojunction are highly tunable with the ferroelectric gate. Based on the regulation effect of the ferroelectric gate dielectric, multiple operating modes can be achieved in a single device: p-n junction, n-n junction, and p-type TFET. At 80 K, the device operates as Esaki diode and backward diode. Finally, the energy band and carrier transport of the ferroelectric-tuned tunneling devices are analyzed. The MoTe2/SnSe2 tunneling diode tuned by ferroelectrics is expected to provide research ideas for the future development of multifunctional and low energy consumption devices.