C. H. Raj KishorM RuksanaT AmishaP. M. Aneesh
Abstract The exceptional stability of metal oxide heterojunctions makes them worthy of the future. Here we report V 2 O 5 /NiO heterojunction device fabricated utilizing both physical and chemical deposition techniques. Orthorhombic V 2 O 5 thin films were grown by thermal evaporation technique using the V 2 O 5 nanostructures synthesized via reverse micelle method. Nickel oxide (NiO) thin films were deposited using the solution-processed spin coating technique. The structural, optical and morphological properties of the V 2 O 5 and NiO thin films were studied in detail. Highly transparent V 2 O 5 /NiO heterojunction was fabricated on FTO coated glass substrate with a device geometry of FTO/NiO/V 2 O 5 /Ag. The electrical properties were studied and the J-V curve shows a rectifying nature with a rectification ratio of 12 at a bias voltage of 0.7 V and a knee voltage of 0.58 V. The variation of the ideality factor is studied in different linear regions of the ln (J)- V curve. From the C-V characteristics of the device, a built-in potential of 0.54 V was obtained.
Uzma IkhlaqSamiullah SamiMaria KhalilFarman UllahShahid M. RamayShahzad Akhtar AliMurtaza Saleem
M. BenmoussA. OutzourhitR. JourdaniA. BennounaE.L. Ameziane
Alain GleizesJ.-M. BuffornC. F. SalzmanE. ViretteFrançois Senocq
Yu.M. ChumakovJoão Ruivo SantosI. FerreiraKonstantinos TermentzidisA. V. PokropivnyS-Y XiongPietro CortonaSebastian Volz