Study of CsPbBr₃ Perovskite Light-Emitting Diodes with PEDOT:PSS-MAPbBr₃ QDs Complex Hole Transport Layer

Abstract

This work presents the effect of a complex hole transport layer (HTL) of poly (3,4-thylenedioxythiophene): poly(styrenesulfonate) (PEDOT: PSS) and MAPbBr 3 quantum dots (QDs) in cesium lead bromide perovskite light-emitting diodes (CsPbBr 3 PeLEDs) structure. The MAPbBr 3 QDs used MAPbBr 3 bulk crystals formed by the liquid-phase crystal growth method at constant temperature as the source material. The CsPbBr 3 PeLEDs with PEDOT:PSS-MAPbBr 3 QDs complexe HTL exhibited the better performance, to compare the CsPbBr 3 PeLEDs with PEDOT:PSS-MAPbBr 3 QDs complexe HTL, owing to the MAPbBr 3 QDs in PEDOT:PSS layer apparently boosted injection efficiency such that the injected holes recombine with electrons in the CsPbBr 3 active layer, rapidly, and then and emissions. The best results of luminescence and external quantum efficiency of CsPbBr 3 PeLEDs with PEDOT:PSS-MAPbBr 3 QDs complex hole transport layer were 10810 cd/m ² and 0.34% at an applied voltage of 5.5 V, respectively.