Semimetallic Atomic Layer Deposited TiS₂ Thin Films for Contact Resistance Improvement of MoS₂-based Thin Film Transistor

Abstract

We introduced atomic layer deposition (ALD) of TiS 2 as contact layer for MoS 2 TFT to reduce the contact resistance. In this study, film properties of low temperature ALD TiS 2 according to growth temperature was analyzed. ALD grown TiS 2 showed semimetallic nature with low resistivity. In addition, change in properties of MoS 2 after TiS 2 deposition was investigated by various method. By applying ALD TiS 2 , we found significant increase in current level and V th reduction which are attributed to semimetal nature of TiS 2 . These results imply that ALD TiS 2 for contact formation is proper method to achieve high performance of MoS 2 TFT.