Mesoporous Semiconductive Bi₂Se₃ Films

Abstract

Bi₂Se₃ is a semiconductive material possessing a bandgap of 0.3 eV, and its unique band structure has paved the way for diverse applications. Herein, we demonstrate a robust platform for synthesizing mesoporous Bi₂Se₃ films with uniform pore sizes via electrodeposition. Block copolymer micelles act as soft templates in the electrolyte to create a 3D porous nanoarchitecture. By controlling the length of the block copolymer, the pore size is adjusted to 9 and 17 nm precisely. The nonporous Bi₂Se₃ film exhibits a tunneling current in a vertical direction of 52.0 nA, but upon introducing porosity (9 nm pores), the tunneling current increases significantly to 684.6 nA, suggesting that the conductivity of Bi₂Se₃ films is dependent on the pore structure and surface area. The abundant porous architecture exposes a larger surface area of Bi₂Se₃ to the surrounding air within the same volume, thereby augmenting its metallic properties.