Low-Voltage Solution-Processed CuBr_XI_1−X Thin-Film Transistors With NAND Logic Function

Abstract

In this brief, the solution-processed CuBr _X I _1-X thin-film transistors (TFTs) are successfully prepared by doping Br in CuI at low temperature (80 °C). By adjusting the doping concentration of Br, the optimized CuBr _0.2 I _0.8 TFTs exhibited a field-effect mobility of 0.39 cm $^{{2}} \cdot \text{V}^{-{1}} \cdot \text{s}^{-{1}}$ , a large ON/ OFF current ratio of $1.2\times 10^{{4}}$ , and a subthreshold swing of 64 mV/decade. The operating voltage of the TFTs is below 2 V, the dynamic stress test shows that the device has good stability, and the electrical performance and stability are much better than undoped CuI TFTs. Meanwhile, the NAND logic function is successfully implemented by this device, which can be applied to the future fabrication of large-scale logic circuits and microelectronic devices.