JOURNAL ARTICLE
La-doped BiFeO3 junction based random access multilevel nonvolatile memory
Dong LiXiaodong ZhuYanan WuJian ZhaoKaimin ZhangRui LiDanni HaoYan-Qing MaRamiro MoroLei Ma
Year: 2022 Journal: Microelectronic Engineering Vol: 267-268 Pages: 111908-111908 Publisher: Elsevier BV
Keywords:
Non-volatile memory Scalability Resistive random-access memory Materials science Random access Reliability (semiconductor) Optoelectronics Ferroelectricity Computer science Resistive touchscreen Random access memory Nanotechnology Doping Electrical engineering Power (physics) Voltage Computer network Engineering Physics Computer hardware
Metrics
5
Cited By
0.63
FWCI (Field Weighted Citation Impact)
50
Refs
0.44
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Citation History
Topics
Multiferroics and related materials
Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials
Advanced Memory and Neural Computing
Physical Sciences → Engineering → Electrical and Electronic Engineering
Ferroelectric and Piezoelectric Materials
Physical Sciences → Materials Science → Materials Chemistry
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