Broadband and High‐Sensitivity Photodetector Based on BiFeO₃/Si Heterojunction

Abstract

Abstract Photovoltaic devices based on ferroelectric materials have broad application prospects; however, there are also problems of narrow bandwidth and low sensitivity. In this paper, polycrystalline BiFeO 3 (BFO) films are prepared directly on n‐Si (100) substrates to form ferroelectric/semiconductor heterostructures, the electrical response of which under weak light intensity (0.8 W m −2 ) is systematically investigated. Accompanied by the dielectric relaxation originated from photocarriers, the polarization of BFO increases while the coercive voltage decreases. Especially, current–voltage ( I–V ) curve under negative bias voltage changes obviously with illumination, and cyclically switchable photocurrent is detected at 0 V bias, with the on‐off ratio increasing for lower temperature. Although the photoresponse is detectable in the broad wavelength range of 275–1100 nm, it is more pronounced for visible light. It is considered that the built‐in electric field of the PN junction at the BFO/n‐Si interface drives the separation and migration of photocarriers, which in turn affects the interface barrier and the distribution of monovalent oxygen vacancies () in BFO while producing the photovoltaic effect. This work provides an effective route for developing photodetectors with high sensitivity and broadband detection.