Preparation and Properties of Ce-Doped Bi_4-xCe_xTi₃O₁₂ Thin Films

Abstract

Ce-doped Bi4-XCexTi3O12 (BCT) films were prepared by the sol-gel method and the heat treatment process different from traditional ones. The experimental results show that the Bi4Ti3O12 (BTO) films still exhibit a single-phase bismuth-layered structure and can effectively improve the ferroelectric properties under the doping of Ce3+, and the maximum residual polarization intensity is 1.23μC/cm2 when the doping amount is x = 1.35. At the same time, the heat treatment process different from the traditional process was used to explore the influence of the preparation process on the surface morphology and ferroelectric properties of the films.