Congdi XuPeng LiuChuang FengZhicai HeYong Cao
OPDs with ultra-low dark current density and high detectivity are developed via interfacial and morphological modifications in the ternary device. A highest D* at 1060 nm exceeding 8.2 × 10 12 Jones is achieved with fast response and wide LDR.
Ji QiLiang NiDezhi YangXiaokang ZhouWenqiang QiaoMao LiDongge MaZhi Yuan Wang
Ming LiuJian WangKaixuan YangZijin ZhaoZhengji ZhouYao MaLiang ShenXiaoling MaFujun Zhang
Haipeng LouYang LiuLian ZhouGehui XieZejiang DengZhenqiang TangZilin ZhaoChenglin GuBin WuDaping LuoWenxue Li
Chuan XiangDi XueHongyu LiuQi WangXingyu JiangCheng ShiChi YanJianlong XuZi WangLizhen HuangLifeng Chi