Simulation of Cu pad expansion in wafer-to-wafer Cu/SiCN hybrid bonding

Yan Wen Tsau; Joke De Messemaeker; Abdellah Salahouelhadj; Mario González; Liesbeth Witters; Boyao Zhang; Marc Seefeldt; Eric Beyne; Ingrid De Wolf

doi:10.1016/j.microrel.2022.114716

JOURNAL ARTICLE

Simulation of Cu pad expansion in wafer-to-wafer Cu/SiCN hybrid bonding

Yan Wen Tsau Joke De Messemaeker Abdellah Salahouelhadj Mario González Liesbeth Witters Boyao Zhang Marc Seefeldt Eric Beyne Ingrid De Wolf

Year: 2022 Journal: Microelectronics Reliability Vol: 138 Pages: 114716-114716 Publisher: Elsevier BV

DOI: 10.1016/j.microrel.2022.114716

Get Full-Text PDF Get Analytical Report

Keywords:

Wafer Materials science Chemical-mechanical planarization Annealing (glass) Anodic bonding Polishing Composite material Creep Wafer bonding Finite element method Mechanism (biology) Optoelectronics Structural engineering Engineering

Metrics

Cited By

1.51

FWCI (Field Weighted Citation Impact)

Refs

0.80

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Citation History

Topics

3D IC and TSV technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advanced Surface Polishing Techniques

Physical Sciences → Engineering → Biomedical Engineering

Advanced ceramic materials synthesis

Physical Sciences → Materials Science → Ceramics and Composites

Simulation of Cu pad expansion in wafer-to-wafer Cu/SiCN hybrid bonding

Metrics

Citation History

Topics

Related Documents

700nm pitch Cu/SiCN wafer-to-wafer hybrid bonding

Scalable, sub 2μm pitch, Cu/SiCN to Cu/SiCN hybrid wafer-to-wafer bonding technology

Low Temperature and Fine Pitch Nanocrystalline Cu/SiCN Wafer-to-Wafer Hybrid Bonding

Scaling Cu/SiCN Wafer-to-Wafer Hybrid Bonding down to 400 nm interconnect pitch

Novel Cu/SiCN surface topography control for 1 μm pitch hybrid wafer-to-wafer bonding