N, O Dual Defect Mediated Ultrathin 2d/2d Tio2/G-C3n4 Heterojunction for Efficient Removal of Levofloxacin: Performance, Degradation Pathway, and Mechanism

Wei Gan; Jun Guo; Xucheng Fu; Miao Zhang; Chunsheng Ding; Hai Yu; Yuqing Lu; Jianrou Li; Ziliang Li; Zhaoqi Sun

doi:10.2139/ssrn.4221012

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N, O Dual Defect Mediated Ultrathin 2d/2d Tio2/G-C3n4 Heterojunction for Efficient Removal of Levofloxacin: Performance, Degradation Pathway, and Mechanism

Wei Gan Jun Guo Xucheng Fu Miao Zhang Chunsheng Ding Hai Yu Yuqing Lu Jianrou Li Ziliang Li Zhaoqi Sun

Year: 2022 Journal: SSRN Electronic Journal Publisher: RELX Group (Netherlands)

DOI: 10.2139/ssrn.4221012

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Keywords:

Degradation (telecommunications) Heterojunction Dual (grammatical number) Mechanism (biology) Materials science Chemistry Optoelectronics Computer science Telecommunications Physics

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Advanced Nanomaterials in Catalysis

Physical Sciences → Materials Science → Materials Chemistry

Advanced Photocatalysis Techniques

Physical Sciences → Energy → Renewable Energy, Sustainability and the Environment

N, O Dual Defect Mediated Ultrathin 2d/2d Tio2/G-C3n4 Heterojunction for Efficient Removal of Levofloxacin: Performance, Degradation Pathway, and Mechanism

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