Irina G. GrevtsevaO. V. OvchinnikovM. S. SmirnovT. S. KondratenkoA. S. PerepelitsaA. M. H. Hussein
Ten-fold increase in quantum yield of defect luminescence was found in area 750 nm with simultaneuous growth of its attenuation from 4 to 200 ns, caused by decoration of quantum point (QP) Ag 2 S/SiO 2 (5.0±1.5 nm) surface with nanoparticles (NP) Au (2.0±0.5 nm). Based on analysis of luminescence kinetics at 77 and 300 K the conclusion was drawn on non-specific manifestation of plasmon-exiton interaction caused by polarization effects from NP Au at properties of small traps that participate in generation of defect luminescence kinetics of QP Ag 2 S/SiO 2 . Keywords: IR luminescence; luminescence attenuation kinetics; quantum points, plasmon nanoparticles, plasmon-exiton interaction.
Irina G. GrevtsevaO. V. OvchinnikovM. S. SmirnovT. S. KondratenkoA. S. PerepelitsaA. M. H. Hussein
O. V. OvchinnikovS. V. AslanovM. S. SmirnovA. S. PerepelitsaT. S. KondratenkoА.S. SelyukovIrina G. Grevtseva
Grevtseva I.G.Ovchinnikov O.V.Smirnov M.S.Kondratenko T.S.Derepko V.N.Hussein A.M.Kh.Egorov N.E.Vozgorkova E.A.
O. V. OvchinnikovS. V. AslanovM. S. SmirnovIrina G. GrevtsevaA. S. Perepelitsa
И.Г. ГревцеваО.В. ОвчинниковМ.С. СмирновТ.С. КондратенкоВ.Н. ДерепкоА.М.Х. ХуссейнН.Е. ЕгоровEkaterina Vozgorkova