Thermoelectric and memristive features of the Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-/Sb-=SUB=-2-=/SUB=-S-=SUB=-3-=/SUB=-/Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=- and Ag/Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-/Ag structures

Abstract

Single-layer Sb 2 Te 3 films and three-layer Sb 2 Te 3 /Sb 2 S 3 /Sb 2 Te 3 structures are obtained by thermal vacuum deposition. Their thermoelectric characteristics have been investigated in a wide temperature range (5-350 K). It is shown that the conductivity of Sb 2 Te 3 /Sb 2 S 3 /Sb 2 Te 3 has a semiconductor behavior, the resistivity is an order of magnitude higher than the resistivity of the Sb 2 Te 3 film; the Seebeck coefficient of Sb 2 Te 3 /Sb 2 S 3 /Sb 2 Te 3 is 1.5 and 3 times higher than the Seebeck coefficient of the film and single-crystal Sb 2 Te 3 , respectively. The current--voltage characteristics of the Sb 2 Te 3 film exhibit memristive properties with unipolar resistive switching, whereas Sb 2 Te 3 /Sb 2 S 3 /Sb 2 Te 3 can be considered as a memristor with a parallel connected capacitance. Keywords: Sb 2 S 3 , Sb 2 Te 3 , films, volt-ampere characteristic, Seebeck coefficient, memristor.