Thermal Analysis of Gallium Oxide-Based Field-Effect Transistors on Different Substrates

Pharyanshu Kachhawa; Vaishali Chaudhary; Nidhi Chaturvedi

doi:10.1007/s11664-022-09871-6

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Thermal Analysis of Gallium Oxide-Based Field-Effect Transistors on Different Substrates

Pharyanshu Kachhawa Vaishali Chaudhary Nidhi Chaturvedi

Year: 2022 Journal: Journal of Electronic Materials Vol: 51 (11)Pages: 6379-6387 Publisher: Springer Science+Business Media

DOI: 10.1007/s11664-022-09871-6

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Keywords:

Gallium Materials science Silicon carbide Gallium nitride Substrate (aquarium) Silicon Optoelectronics Oxide Field-effect transistor Transistor Electronic engineering Nanotechnology Electrical engineering Layer (electronics) Composite material Metallurgy Engineering

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Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Thermal Analysis of Gallium Oxide-Based Field-Effect Transistors on Different Substrates

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