Chemically Synthesized ZnO Thin Film Electrode for Supercapacitor Application

Abstract

In this paper, we synthesized zinc oxide (ZnO) thin film by using a cost effective chemical bath deposition technique (CBD) at 90 ∘ C. The as-deposited ZnO films exhibited polycrystalline in nature. The FESEM image shows growth of nanorods about 0.2[Formula: see text][Formula: see text]m length. The Raman spectrum was recorded using frequency of 532[Formula: see text]nm with excited line Nd-YAG laser. The optical band gap of ZnO thin film obtained 3.37[Formula: see text]eV. The value of RMS roughness is determined by atomic force microscopy (AFM), found to be 34[Formula: see text]nm. The supercapactive studies were determined in 2[Formula: see text]M[Formula: see text]KOH aqueous electrolyte by means of cyclic voltammetry and charge–discharge technique. ZnO exhibited maximum specific capacitance of ZnO 204[Formula: see text]F/g at the scan rate of 5[Formula: see text]mV/s.