250C Process for &lt; 2dB/m Ultra-Low Loss Silicon Nitride Integrated Photonic Waveguides

Debapam Bose; Jiawei Wang; Daniel J. Blumenthal

doi:10.1364/cleo_si.2022.sf3o.1

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250C Process for < 2dB/m Ultra-Low Loss Silicon Nitride Integrated Photonic Waveguides

Debapam Bose Jiawei Wang Daniel J. Blumenthal

Year: 2022 Journal: Conference on Lasers and Electro-Optics Vol: 106 Pages: SF3O.1-SF3O.1

DOI: 10.1364/cleo_si.2022.sf3o.1

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Abstract

We report fabrication of CMOS-compatible Si 3 N 4 waveguides, including resonators, with 2.0dB/m loss as well as 11.18million loaded Q at 1550nm, using a maximum temperature of 250C during and after Si 3 N 4 deposition, enabling system-on-chip integration.

Keywords:

Resonator Fabrication Materials science Silicon nitride Optoelectronics Photonics Silicon photonics Silicon Process (computing) CMOS Chip Waveguide Integrated optics Electronic engineering Computer science Engineering Telecommunications

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Advanced Fiber Laser Technologies

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Photonic and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Optical Network Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

250C Process for < 2dB/m Ultra-Low Loss Silicon Nitride Integrated Photonic Waveguides

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