Anisotropic photoelectric properties in GaN/AlN quantum dots under terahertz laser polarization

Jiahao You; Kangxian Guo

doi:10.1016/j.physe.2022.115390

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Anisotropic photoelectric properties in GaN/AlN quantum dots under terahertz laser polarization

Jiahao You Kangxian Guo

Year: 2022 Journal: Physica E Low-dimensional Systems and Nanostructures Vol: 144 Pages: 115390-115390 Publisher: Elsevier BV

DOI: 10.1016/j.physe.2022.115390

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Keywords:

Laser Materials science Terahertz radiation Refractive index Photoelectric effect Polarization (electrochemistry) Linear polarization Optoelectronics Optics Anisotropy Physics Chemistry

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Terahertz technology and applications

Physical Sciences → Engineering → Electrical and Electronic Engineering

Anisotropic photoelectric properties in GaN/AlN quantum dots under terahertz laser polarization

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