Enhanced Ga₂O₃-Based RRAM via Stacked Bilayer ZnO/Ga₂O₃

Abstract

The stability and endurance of resistive random-access memory (RRAM) devices over long-term use has been widely acknowledged as a concern. Therefore, different top electrodes and oxygen concentration flows were used with stacked ZnO/Ga 2 O 3 as the switching layer to enhance the performance of Ga 2 O 3 -based RRAM. All switching layers were deposited by radio frequency sputtering in this study, and the oxygen vacancies were well controlled by controlling the oxygen concentration flow. When a stacked structure was formed, the gradients in the concentration of oxygen vacancies and mobility influenced the set and reset processes. With the stacked structure, the average set voltage was 1.5 V, and the average reset voltage was −0.7 V. In addition, under DC sweeps, the stacked RRAM demonstrated a high operating life of more than 300 cycles. In conclusion, the performance and stability of RRAM can be enhanced by adjusting the concentration of oxygen vacancies using different compositions of elements.